Multiferroic nanoscale thin film materials, method of its facile syntheses and magnetoelectric coupling at room temperature
US8591987B2 · kind B2 · utility
1Cited by
18References
15Claims
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Key dates
| Filing date | May 10, 2010 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Sep 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Methods of producing a multiferroic thin film material. The method includes the steps of providing a multiferroic precursor solution, subjecting the precursor solution to spin casting to produce a spin cast film, and heating the spin cast film. The precursor solution may include Bi(NO3)3.5H2O and Fe(NO3)3.9H2O in ethylene glycol to produce a bismuth ferrite film. Further, the thin film may be utilized in varied technological areas, including memory devices for information storage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.