Patent · US Active

Method for manufacturing a LED

US8592234B2 · kind B2 · utility

0Cited by
9References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 27, 2012
Grant dateNov 26, 2013
Priority date
Expiry dateAug 27, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8506

Abstract

A light emitting diode comprises a permanent substrate having a chip holding space formed on a first surface of the permanent substrate; an insulating layer and a metal layer sequentially formed on the first surface of the permanent substrate and the chip holding space, wherein the metal layer comprises a first area and a second area not being contacted to each other; a chip having a first surface attached on a bottom of the chip holding space, contacted to the first area of the metal layer; a filler structure filled between the chip holding space and the chip; and a first electrode formed on a second surface of the chip. The chip comprises a light-emitting region and an electrical connection between the first area of the metal layer and the light emitting region is realized by using a chip-bonding technology.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.