Method for manufacture of optically pumped, surface-emitting semiconductor laser device

US8592236B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Tony Albrecht · Bad Abbach, DE
• Norbert Linder · Wenzenbach, DE
• Johann Luft · Wolfsegg, DE

Key dates

• Filing date: Nov 27, 2007
• Grant date: Nov 26, 2013
• Expiry date: Mar 3, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S2301/166
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.