Method of manufacturing a thin film transistor including forming bus line patterns in a substrate and filling with metal
US8592237B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Aug 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a thin film transistor substrate including forming bus lines by etching a surface of a substrate to form bus line patterns and filling the bus line patterns with a bus line metal; forming a semiconductor channel layer at one portion of a pixel area defined by the bus lines; and forming source-drain electrodes on the semiconductor channel layer, a pixel electrode extending from the drain electrode within the pixel area, and a common electrode parallel with the pixel electrode. The bus lines are formed as being thicker but the bus lines are buried in the substrate so that the line resistance can be reduced and the step difference due to the thickness of bus line does not affect the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.