Method of manufacturing non-volatile semiconductor memory device
US8592272B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 30, 2012 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Aug 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/681
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a non-volatile semiconductor memory device of an embodiment includes: forming, on a semiconductor substrate, an element isolation region to be filled with a first insulating film; forming memory cell gate electrodes on element regions; etching the first insulating film so that the first insulating film remains in the element isolation region of a region in which a select gate electrode is to be formed; forming a second insulating film on the memory cell gate electrodes so that an air gap is created between the memory cell gate electrodes; forming two select gate electrodes; forming carbon side walls on the select gate electrodes; implanting ions of an impurity between the two select gate electrodes with the side walls as a mask; and removing the carbon side walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.