Vertical light emitting diodes
US8592842B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 3, 2008 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Apr 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A light emitting device (LED) employs one or more conductive multilayer reflector (CMR) structures. Each CMR is located between the light emitting region and a metal electrical contact region, thereby acting as low-loss, high-reflectivity region that masks the lossy metal contact regions away from the trapped waveguide modes. Improved optical light extraction via an upper surface is thereby achieved and a vertical conduction path is provided for current spreading in the device. In an example vertical, flip-chip type device, a CMR is employed between the metal bottom contact and the p-GaN flip chip layer. A complete light emitting module comprises the LED and encapsulant layers with a phosphor. Also provided is a method of manufacture of the LED and the module.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.