Methods and apparatus for antimonide-based backward diode millimeter-wave detectors
US8592859B2 · kind B2 · utility
0Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 2009 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Oct 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/222
Abstract
Example methods and apparatus for Antimonide-based backward diode millimeter-wave detectors are disclosed. A disclosed example backward diode includes a cathode layer adjacent to a first side of a non-uniform doping profile, and an Antimonide tunnel barrier layer adjacent to a second side of the spacer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.