Apparatus and method for protection of electronic circuits operating under high stress conditions

US8592860B2 · kind B2 · utility

Assignee

• Analog Devices, Inc. · US

Inventors

• Javier Alejandro Salcedo · North Billerica, US
• David Hall Whitney · Westford, US

Key dates

• Filing date: Feb 11, 2011
• Grant date: Nov 26, 2013
• Expiry date: Jul 18, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/713

Abstract

Apparatus and methods for electronic circuit protection under high stress operating conditions are provided. In one embodiment, an apparatus includes a substrate having a first p-well, a second p-well adjacent the first p-well, and an n-type region separating the first and second p-wells. An n-type active area is over the first p-well and a p-type active area is over the second p-well. The n-type and p-type active areas are electrically connected to a cathode and anode of a high reverse blocking voltage (HRBV) device, respectively. The n-type active area, the first p-well and the n-type region operate as an NPN bipolar transistor and the second p-well, the n-type region, and the first p-well operate as a PNP bipolar transistor. The NPN bipolar transistor defines a relatively low forward trigger voltage of the HRBV device and the PNP bipolar transistor defines a relatively high reverse breakdown voltage of the HRBV device.