Nonvolatile semiconductor memory device and method for manufacturing the same
US8592885B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2012 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Feb 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a tunneling insulating film, a floating gate, a leak suppression unit, an inter-gate insulating film, and a control gate. The substrate includes silicon. The tunneling insulating film is provided on the substrate. The floating gate is provided on the tunneling insulating film. The leak suppression unit is provided on the floating gate. The inter-gate insulating film is provided on the leak suppression unit. The control gate is provided on the inter-gate insulating film. The dielectric constant of the leak suppression unit is higher than a dielectric constant of the inter-gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.