Field effect transistor for sensing deformation

US8592888B2 · kind B2 · utility

Assignee

• Nokia · FI

Inventors

• Jani Kivioja · Cambridge, GB
• Richard White · Cambridge, GB

Key dates

• Filing date: Aug 9, 2011
• Grant date: Nov 26, 2013
• Expiry date: Feb 13, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/112
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

An apparatus including a first layer configured to enable a flow of charge carriers from a source electrode to a drain electrode, a second layer configured to control the density of charge carriers in the first layer using an electric field formed between the first and second layers, and a third layer positioned between the first and second layers to shield the first layer from the electric field, wherein the third layer includes a layer of electrically conducting nanoparticles and is configured such that when stress is applied to the third layer, the strength of the electric field experienced by the first layer is varied resulting in a change in the charge carrier density and a corresponding change in the conductance of the first layer.