Method of fabricating semiconductor device and the semiconductor device
US8592978B2 · kind B2 · utility
2Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2010 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Mar 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, an insulating film formed above the semiconductor substrate, and a plurality of first buried wirings and a plurality of second buried wirings located in the insulating film at predetermined intervals alternately in a direction parallel to a surface of the semiconductor substrate. Each second buried wiring is formed so that a width between both side surfaces thereof is increased from a lower end toward an upper portion and at an upper surface the width is larger than a width at an upper surface of each first buried wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.