Semiconductor integrated circuit device and method of manufacturing the same
US8592984B2 · kind B2 · utility
2Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Aug 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To suppress peeling of an Au pad for external coupling provided in a rewiring containing Cu as a main component. On the surface of a rewiring including a two-layer film in which a first Ni film is laminated on the top of a Cu film, a pad to which a wire is coupled is formed. The pad includes a two-layer film in which an Au film is laminated on the top of a second Ni film and formed integrally so as to cover the top surface and the side surface of the rewiring. Due to this, the area of contact between the rewiring and the pad increases, and therefore, the pad becomes difficult to be peeled off from the rewiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.