Semiconductor device
US8592988B2 · kind B2 · utility
14Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Dec 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a substrate and a through electrode. The substrate may have a first surface and a second surface opposite to the first surface, the substrate including circuit patterns formed on the first surface. The through electrode penetrates the substrate and may be electrically connected to the circuit pattern, the through electrode including a first plug that extends from the first surface in a thickness direction of the substrate and a second plug that extends from the second surface in the thickness direction of the substrate so as to be connected to the first plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.