Patent · US Active

Thin film wafer level package

US8592998B2 · kind B2 · utility

2Cited by

1References

8Claims

0Family size

Assignees

IMEC · BE
Katholieke Universiteit Leuven, KU LEUVEN R&D · BE

Inventors

Gert Claes · Leuven, BE
Ann Witvrouw · Herent, BE

Key dates

Filing date	Jan 24, 2011
Grant date	Nov 26, 2013
Priority date	—
Expiry date	Jan 24, 2031

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2203/0735
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Anchor designs for thin film packages are disclosed that, in a preferred embodiment are a combination of SiGe-filled trenches and Si-oxide-filled spacing. Depending on the release process, additional manufacturing process steps are performed in order to obtain a desired mechanical strength. For aggressive release processes, additional soft sputter etch and a Ti—TiN interlayer in the anchor region may be added. The ratio of the total SiGe—SiGe anchor area to the SiO2—SiGe anchor area determines the mechanical strength of the anchor. If this ratio is larger than 1, the thin film package reaches the MIL-standard requirements.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.