Patent · US Active

Multilayer photonic structures

US8593728B2 · kind B2 · utility

18Cited by
63References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 13, 2010
Grant dateNov 26, 2013
Priority date
Expiry dateJan 9, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B5/285
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A multilayer photonic structure may include a plurality of coating layers of high index dielectric material of index of refraction nH and a plurality of coating layers of low index dielectric material of index of refraction nL alternately arranged with a first coating layer and a last coating layer of the multi-layer photonic structure comprise low index material. An index-thickness of each coating layer of the multilayer photonic structure is different than every other coating layer of the multilayer photonic structure. The multilayer photonic structure has a first high reflectivity bandwidth, a second high reflectivity bandwidth and a low reflectivity bandwidth wherein the low reflectivity bandwidth is positioned between the first high reflectivity bandwidth and the second high reflectivity bandwidth.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.