Resistance heated sapphire single crystal ingot grower, method of manufacturing resistance heated sapphire single crystal ingot, sapphire single crystal ingot, and sapphire wafer
US8597756B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Jan 19, 2012 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Mar 22, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/298
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided are a resistance heated sapphire single crystal ingot grower, a method of manufacturing a resistance heated sapphire single crystal ingot, a sapphire single crystal ingot, and a sapphire wafer. The resistance heated sapphire single crystal ingot grower comprises according to an embodiment includes a chamber, a crucible included in the chamber and containing an alumina melt, and a resistance heating heater included inside the chamber and heating the crucible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.