Vertical structure LED current spreading by implanted regions
US8597962B2 · kind B2 · utility
1Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2011 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Dec 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
Abstract
An improved method of fabricating a vertical semiconductor LED is disclosed. Ions are implanted into the LED to create non-conductive regions, which facilitates current spreading in the device. In some embodiments, the non-conductive regions are located in the p-type layer. In other embodiments, the non-conductive layer may be in the multi-quantum well or n-type layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.