Method for producing a semiconductor element

US8598014B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Michael Fehrer · Bad Abbach, DE
• Berthold Hahn · Hemau, DE
• Volker Harle · Hemau, DE
• Stephan Kaiser · Regensburg, DE
• Frank Otte · Mount Prospect, US
• Andreas Plössl · Regensburg, DE

Key dates

• Filing date: Oct 26, 2011
• Grant date: Dec 3, 2013
• Expiry date: Oct 26, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/018
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.