Solid solution inducing layer for weak epitaxy growth of non-planar phthalocyanine
US8598151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2011 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Dec 21, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to solid solution inducing layer for the preparation of weak epitaxial films of non-planar phthalocyanine and the thin film of non-planar phthalocyanine generated from the weak epitaxial growth on the solid solution inducing layer and organic thin film transistor based on the weak rpitaxy growth thin film of non-planar phthalocyanine. The solid solution inducing layer is prepared at certain substrate temperature by vapor co-deposition of any two inducing layer molecules presented by Formula I and Formula II.The solid solution inducing layer has uniformed structure, of which the lattice parameter and electronic structure can be controlled by adjusting the component proportion, the solid solution inducing layer can epitaxially grow a high quality thin film of non-planar phthalocyanine and fabricate high performance transistor device based on such epitaxial thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.