Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

US8598596B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Vincent Grolier · Birkenfeld, DE
• Lutz Hoeppel · Alteglofsheim, DE
• Hans-Jürgen Lugauer · Sinzing, DE
• Martin Strassburg · Tegernheim, DE
• Andreas Biebersdorf · Regensburg, DE

Key dates

• Filing date: Oct 12, 2009
• Grant date: Dec 3, 2013
• Expiry date: Feb 12, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/817

Abstract

An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one doped functional layer having at least one dopant and at least one codopant, wherein the semiconductor layer sequence includes a semiconductor material having a lattice structure, one selected from the dopant and the codopant is an electron acceptor and the other an electron donor, the codopant is bonded to the semiconductor material and/or arranged at interstitial sites, and the codopant at least partly forms no bonding complexes with the dopant.