Light emitting device and method of manufacturing the same
US8598607B2 · kind B2 · utility
0Cited by
4References
59Claims
0Family size
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Key dates
| Filing date | Mar 24, 2010 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Aug 8, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.