High voltage junction field effect transistor with spiral field plate
US8598637B2 · kind B2 · utility
1Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2009 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | May 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
In one embodiment, a junction field effect transistor having a substrate, wherein formed on the substrate is a graded n-doped region having a high doping concentration in an inner region and a low doping concentration in an outer region, with a p-doped buried region adjacent to the graded n-doped region near the outer region, and a spiral resistor connected to the graded n-doped region at its inner region and at its outer region. An ohmic contact at the inner region provides the drain, an ohmic contact at the outer region provides the source, and an ohmic contact at the substrate provides the gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.