Doherty amplifier and semiconductor device
US8598954B2 · kind B2 · utility
2Cited by
5References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2013 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Feb 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A Doherty amplifier includes a carrier amplifier including a first FET, the first FET having a plurality of gate electrodes, and a peaking amplifier including a second FET, the second FET having a plurality of gate electrodes, a gate-to-gate interval of the gate electrodes of the second FET being shorter than a gate-to-gate interval of the first FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.