Elastic wave element and electronic device using the same
US8598968B2 · kind B2 · utility
1Cited by
8References
7Claims
0Family size
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Key dates
| Filing date | Nov 6, 2009 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Nov 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02818
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An elastic wave device has a convex portion on the top face of a first dielectric layer over an IDT electrode when the elastic wave device has a structure of a boundary wave device in which a film thickness of a second dielectric layer is not less than 1.6 times as much as a pitch width of the IDT electrode. This convex portion increases an electromechanical coupling coefficient of SH wave that is the major wave. Accordingly, good filter characteristics can be easily achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.