Patent · US Active

Boosting memory module performance

US8599636B2 · kind B2 · utility

0Cited by
0References
26Claims
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Assignee

Inventors

Key dates

Filing dateDec 2, 2011
Grant dateDec 3, 2013
Priority date
Expiry dateDec 2, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C5/148
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Power supplied to a memory module is provided. A first voltage is supplied to a first power distribution pathway, the first voltage being from a voltage supplied to a printed circuit board on which the memory module resides. A second voltage is generated, the second voltage being generated by a voltage regulator. The second voltage is supplied to a second power distribution pathway.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.