Patent · US Active

Electrochemical etching of semiconductors

US8603314B2 · kind B2 · utility

0Cited by

9References

5Claims

0Family size

Assignee

Rohm and Haas Electronic Materials LLC · US

Inventors

Gary Hamm · Billerica, US
Jason A. Reese · Londonderry, US
George R. Allardyce · Hinckley, GB

Key dates

Filing date	Dec 13, 2011
Grant date	Dec 10, 2013
Priority date	—
Expiry date	Mar 12, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.