Compositions for extending ion source life and improving ion source performance during carbon implantation
US8603363B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2012 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Jun 20, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/564
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A novel method and system for extending ion source life and improving ion source performance during carbon implantation are provided. Particularly, the carbon ion implant process involves utilizing a dopant gas mixture comprising carbon monoxide and one or more fluorine-containing gas with carbon represented by the formula CxFy wherein x≧1 and y≧1. At least one fluorine containing gases with carbon is contained in the mixture at about 3-12 volume percent (vol %) based on the volume of the dopant gas mixture. Fluoride ions, radicals or combinations thereof are released from the ionized dopant gas mixture and reacts with deposits derived substantially from carbon along at least one of the surfaces of the repeller electrodes, extraction electrodes and the chamber to reduce the overall amount of deposits. In this manner, a single dopant gas mixture provides carbon ions and removes problematic deposits typically encountered during carbon implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.