Manufacture of n-type chalcogenide compositions and their uses in photovoltaic devices
US8603581B2 · kind B2 · utility
1Cited by
10References
15Claims
0Family size
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Key dates
| Filing date | Oct 26, 2010 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Sep 8, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/543
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A layer of an n-type chalcogenide compositions including at least cadmium that is provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen. Such n-type chalcogenide compositions are particularly useful in the making of photovoltaic devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.