Method for providing an improved hard bias structure
US8603593B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2012 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Sep 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/123
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for providing a hard bias structure is provided. The method comprises providing a seed layer for a hard bias layer, the seed layer having a seed layer lattice constant and a natural growth texture. The method further comprises depositing the hard bias layer for the hard bias structure on the seed layer, the natural growth texture corresponding to a texture for the hard bias layer. The hard bias layer has a bulk lattice constant. The step of providing the seed layer includes forming a first plasma of a first deposition gas configured to expand the seed layer lattice constant if the bulk lattice constant is greater than the seed layer constant. The step of depositing the hard bias layer includes forming a second plasma of a second deposition gas configured to expand the bulk lattice constant if the seed layer lattice constant is greater than the bulk lattice constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.