Electronic component having tin rich deposit layer and the process for depositing the same
US8603643B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 4, 2005 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Mar 31, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12715
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to an electronic component with Sn rich deposit layer on the part for electric connection, wherein the Sn rich deposit layer is a fine grained Sn rich deposit layer composed of grains with smaller size in the direction perpendicular to the deposit surface than in the direction parallel to the deposit surface. It also relates to a process for plating an electronic component, so as to form a Sn rich deposit layer on the part for electric connection, comprising the steps of: adjusting the composition of tin plating solution in which starter additive and brighter additive are included; moving the electronic component through the tin plating solution, so as to form a fine grained Sn rich deposit layer on the part for electric connection. As compared with the prior art, the invention can validly inhibit the whisker growth with low cost and reliable property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.