Preparation method for resistance switchable conductive filler for ReRAM
US8603854B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2013 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Apr 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods for preparing a resistive random-access memory (ReRAM) based on resistive switching using a resistance-switchable conductive filler. When a resistance-switchable conductive filler prepared by coating a conductive filler with a material whose resistance is changeable is mixed with a dielectric material, the dielectric material is given the resistive switching characteristics without losing its inherent properties. Therefore, various resistance-switchable materials having various properties can be prepared by mixing the resistance-switchable conductive filler with different dielectric materials. The resulting resistance-switchable material shows resistive switching characteristics comparable to those of the existing metal oxide film-based resistance-switchable materials. Accordingly, a ReRAM device having the inherent properties of a dielectric material can be prepared using the resistance-switchable conductive filler.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.