Composition for removing a photoresist and method of manufacturing a thin-film transistor substrate using the composition
US8603867B2 · kind B2 · utility
15Cited by
1References
24Claims
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Key dates
| Filing date | Apr 4, 2012 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Jun 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide (“TMAH”), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.