Semiconductor device including gate electrode provided over active region in P-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus
US8603880B2 · kind B2 · utility
45Cited by
2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 1, 2011 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Dec 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a nitride semiconductor stacked structure including a carrier transit layer and a carrier supply layer; a p-type nitride semiconductor layer provided over the nitride semiconductor stacked structure and including an active region and an inactive region; an n-type nitride semiconductor layer provided on the inactive region in the p-type nitride semiconductor layer; and a gate electrode provided over the active region in the p-type nitride semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.