Bidirectional protection component
US8604515B2 · kind B2 · utility
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50References
34Claims
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Key dates
| Filing date | May 11, 2011 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | May 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
Abstract
A bidirectional protection component formed in a semiconductor substrate of a first conductivity type including a first implanted area of the first conductivity type, an epitaxial layer of the second conductivity type on the substrate and the first implanted area, a second area of the first conductivity type on the external side of the epitaxial layer, in front of the first area, and implanted with the same dose as the first area, a first metallization covering the entire lower surface of the substrate, and a second metallization covering the second area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.