CCD image sensors having multiple lateral overflow drain regions for a horizontal shift register

US8605187B2 · kind B2 · utility

Assignee

• Truesense Imaging, Inc. · US

Inventors

• Shen Wang · Webster, US
• Eric J. Meisenzahl · Ontario, US
• David N. Nichols · Fairport, US

Key dates

• Filing date: Jun 1, 2009
• Grant date: Dec 10, 2013
• Expiry date: Sep 7, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/158

Abstract

A charge-coupled device (CCD) image sensor includes a layer of a semiconductor material having a first conductivity type. A horizontal CCD channel region of a second conductivity type is disposed in the layer of the semiconductor material. The horizontal CCD channel region includes multiple phases that are used to shift photo-generated charge through the horizontal CCD channel region. Distinct overflow drain regions are disposed in the layer of semiconducting material, with an overflow drain region electrically connected to only one particular phase of the horizontal CCD channel region. A buffer region of the second conductivity type can be used to electrically connect each overflow drain to the one particular phase of the horizontal CCD channel. Multiple barrier regions are disposed in the layer of semiconductor material, with each barrier region disposed between each overflow drain and the one particular phase electrically connected to the drain.