Patent · US Active

Structure comprising a getter layer and an adjusting sublayer and fabrication process

US8605445B2 · kind B2 · utility

3Cited by

13References

15Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Xavier Baillin · Crolles, FR

Key dates

Filing date	Oct 9, 2008
Grant date	Dec 10, 2013
Priority date	—
Expiry date	Nov 5, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/01079
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The structure comprises at least a device, for example a microelectronic chip, and at least a getter arranged in a cavity under a controlled atmosphere delineated by a substrate and a sealing cover. The getter comprises at least one preferably metallic getter layer, and an adjustment sub-layer made from pure metal, situated between the getter layer and the substrate, on which it is formed. The adjustment sub-layer is designed to modulate the activation temperature of the getter layer. The getter layer comprises two elementary getter layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.