Low-energy, hydrogen-free method of diamond synthesis
US8608850B1 · kind B1 · utility
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19Claims
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Key dates
| Filing date | Jan 18, 2010 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Sep 18, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Diamond thin films were deposited on copper substrate by the Vapor Solid (VS) deposition method using a mixture of fullerene C60 and graphite as the source material. The deposition took place only when the substrate was kept in a narrow temperature range of approximately 550-650° C. Temperatures below and above this range results in the deposition of fullerenes and other carbon compounds, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.