Method of manufacturing a transfer mask and method of manufacturing a semiconductor device
US8609304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Jun 19, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An internal defect or the like of a transfer mask is detected using transmitted light quantity distribution data of an inspection apparatus. Using a die-to-die comparison inspection method, inspection light is irradiated to a first region of a thin film to obtain a first transmitted light quantity distribution, the inspection light is also irradiated to a second region of the thin film to obtain a second transmitted light quantity distribution, a predetermined-range difference distribution is produced by plotting coordinates at which difference light quantity values calculated from a comparison between the first transmitted light quantity distribution and the second transmitted light quantity distribution are each not less than a first threshold value and less than a second threshold value, and a selection is made of a transfer mask in which a region with high density of plotting is not detected in the predetermined-range difference distribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.