System for producing patterned silicon carbide structures
US8609323B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | May 30, 2012 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | May 30, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24926
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming ceramic pattern structures of silicon carbide film includes depositing an electron-beam resist or a photo-resist onto a substrate. A portion of the resist is selectively removed from the substrate to form a resist pattern on the substrate. A film of pre-ceramic polymer that includes silicon and carbon is deposited onto the substrate and resist pattern and the pre-ceramic polymer film is cured. A portion of the cured pre-ceramic polymer film on the resist pattern is removed, thereby forming a pre-ceramic polymer pattern on the substrate. The pre-ceramic polymer pattern is then converted to a ceramic pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.