Semiconductor structure and fabricating method thereof
US8609460B2 · kind B2 · utility
5Cited by
3References
8Claims
0Family size
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Key dates
| Filing date | Apr 18, 2011 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Jan 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.