Semiconductor epitaxy on diamond for heat spreading applications
US8609461B1 · kind B1 · utility
2Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2010 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Oct 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various embodiments provide methods for forming a diamond heat spreader and integrating the diamond heat spreader with a heat source without generating voids at the interface. In one embodiment, a semiconductor layer can be epitaxially formed on a diamond substrate having a desirably low surface root mean square (RMS) roughness. The semiconductor epi-layer can be used as an interface layer for bonding the diamond substrate to the heat source to provide efficient heat spreading.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.