Gated-varactors
US8609479B2 · kind B2 · utility
2Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2012 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Aug 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/211
Abstract
In at least one embodiment, a method of manufacturing a varactor includes forming a well over a substrate. The well has a first type doping. A first source region and a second source region are formed in the well, and the first source region and the second source region have a second type doping. A drain region is formed in the well, and the drain region has the first type doping. A first gate region is formed over the well between the drain region and the first source region. Moreover, a second gate region is formed over the well between the drain region and the second source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.