Method of manufacturing semiconductor device
US8609487B2 · kind B2 · utility
2Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2010 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Feb 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, wherein forming the second insulating film comprises forming an insulating film containing silicon using source gas not containing chlorine, and forming an insulating film containing oxygen and a metal element on the insulating film containing silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.