Apparatus comprising nanowires
US8610100B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2009 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Aug 16, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method including: a) depositing a masking material over a substrate comprising silicon; b) removing the masking material using a first process that removes the masking material in preference to silicon; c) removing silicon using a second process that removes silicon in preference to the masking material; d) continuously repeating the sequence of steps a), b) and c) to control the creation of nanowires; and e) stopping repetition of the sequence of steps a), b) and c).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.