Light emitting device having a well structure different of a multi-quantum well structures
US8610107B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 1, 2012 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Feb 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and barrier layers. The barrier layers comprise a first barrier layer which is the nearest to a second conductive type semiconductor layer and has a first band gap, a second barrier layer having a third band gap, and a third barrier layer having the first band gap between the second barrier layer and a first conductive type semiconductor layer. The well layers comprise a first well layer having a second band gap between the first and the second barrier layers, and a second well layer between the second barrier layer and the third barrier layer. The second barrier layer is disposed between the first and the second well layers, and the third band gap is narrower than the first band gap and wider than the second band gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.