Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element

US8610151B2 · kind B2 · utility

Assignee

• Stanley Electric Co., Ltd. · JP

Inventors

• Chiharu Sasaki · Tokyo, JP
• Wataru Tamura · Tokyo, JP
• Keita Akiyama · Yokosuka, JP

Key dates

• Filing date: Mar 8, 2012
• Grant date: Dec 17, 2013
• Expiry date: Jul 19, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/831

Abstract

There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×1018 cm−3 to 5×1018 cm−3; a second n-clad having a carrier density of 1×1018 cm−3 to 5×1018 cm−3; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 μm; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.