Infrared detector with extended spectral response in the visible field

US8610171B2 · kind B2 · utility

Assignee

• THALES · FR

Inventors

• Philippe Bois · Cesson, FR
• Olivier Parillaud · Gif-sur-Yvette, FR
• Xavier Marcadet · Palaiseau, FR
• Michel Papuchon · Massy, FR

Key dates

• Filing date: Dec 8, 2009
• Grant date: Dec 17, 2013
• Expiry date: Apr 29, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium.