Allotropic or morphologic change in silicon induced by electromagnetic radiation for resistance turning of integrated circuits
US8610215B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Sep 19, 2008 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Jan 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.