Low voltage protection devices for precision transceivers and methods of forming the same
US8610251B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 1, 2012 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Jun 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
A bi-directional protection device includes a bi-directional NPN bipolar transistor including an emitter/collector formed from a first n-well region, a base formed from a p-well region, and a collector/emitter formed from a second n-well region. P-type active regions are formed in the first and second n-well regions to form a PNPNP structure, which is isolated from the substrate using dual-tub isolation consisting of an n-type tub and a p-type tub. The dual-tub isolation prevents induced latch-up during integrated circuit powered stress conditions by preventing the wells associated with the PNPNP structure from injecting carriers into the substrate. The size, spacing, and doping concentrations of active regions and wells associated with the PNPNP structure are selected to provide fine-tuned control of the trigger and holding voltage characteristics to enable the bi-directional protection device to be implemented in high voltage applications using low voltage precision interface signaling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.