Semiconductor component and method for producing a metal-semiconductor contact

US8610289B2 · kind B2 · utility

Assignee

• SCHOTT SOLAR AG · DE

Inventors

• Bernd Wildpanner · Dresden, DE
• Hilmar Von Campe · Bad Homburg vor der Höhe, DE
• Werner Buss · Hanau, DE

Key dates

• Filing date: Jun 12, 2008
• Grant date: Dec 17, 2013
• Expiry date: Oct 15, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/12708

Abstract

A semiconductor component including a first layer (10) of a semiconductor material as a substrate, a second layer (12) running on said first layer (10), and at least two intermediate layers (14, 16) made of the materials of the first and second layers running between the first and second layer, where the first intermediate layer (16) facing the second layer (12) may contain a eutectic mixture (18) made of the materials of the first and second layers. The invention is also directed to an electroconductive contact (15, 15a, 15b) forming an electroconductive connection to the first layer and originating at or running through the second layer, as well as to a method for producing the metal-semiconductor contact. In order to produce a mechanically durable, electrically flawless, removable contact in the area of the material of the second layer it is proposed that the electroconductive contact (15, 15a, 15b) include a solderable or wettable metallic material, which is alloyed into the second layer (12) or which forms a mixture with the material of the second layer.